10-F007NIA030SM-P965F39 target datasheet 17 jun. 2016 / revision 1 1 copyright vincotech maximum ratings t j = 25 c, unless otherwise specified parameter symbol condition value unit boost switch collector-emitter voltage v ces 600 v collector current i c t j = t jmax t s = 80 c 30 a repetitive peak collector current i crm t p limited by t jmax 90 a total power dissipation p tot t j = t jmax t s = 80 c 56 w gate-emitter voltage v ges 20 v short circuit ratings t sc t j 150 c 6 s v cc v ge = 15 v 360 v maximum junction temperature t jmax 175 c flow npc 0 650 v / 30 a neutral point clamped inverter reactive power capability low inductance layout solar inverter ups 10-F007NIA030SM-P965F39 flow 0 17mm housing schematic features target applications types
10-F007NIA030SM-P965F39 target datasheet 17 jun. 2016 / revision 1 2 copyright vincotech maximum ratings t j = 25 c, unless otherwise specified parameter symbol condition value unit boost diode peak repetitive reverse voltage v rrm 650 v continuous (direct) forward current i f t j = t jmax t s = 80 c 17 a total power dissipation p tot t j = t jmax t s = 80 c 33 w maximum junction temperature t jmax 175 c buck switch collector-emitter voltage v ces 650 v collector current i c t j = t jmax t s = 80 c 28 a repetitive peak collector current i crm t p limited by t jmax 90 a total power dissipation p tot t j = t jmax t s = 80 c 57 w gate-emitter voltage v ges 20 v maximum junction temperature t jmax 175 c buck diode peak repetitive reverse voltage v rrm 600 v continuous (direct) forward current i f t j = t jmax t s = 80 c 23 a surge (non-repetitive) forward current i fsm 60 hz single half sine wave 150 a total power dissipation p tot t j = t jmax t s = 80 c 42 w maximum junction temperature t jmax 150 c boost sw. protection diode peak repetitive reverse voltage v rrm 600 v continuous (direct) forward current i f t j = t jmax t s = 80 c 14 a repetitive peak forward current i frm 20 a total power dissipation p tot t j = t jmax t s = 80 c 33 w maximum junction temperature t jmax 175 c
10-F007NIA030SM-P965F39 target datasheet 17 jun. 2016 / revision 1 3 copyright vincotech maximum ratings t j = 25 c, unless otherwise specified parameter symbol condition value unit module properties thermal properties storage temperature t stg -40+125 c operation temperature under switching condition t jop -40( t jmax - 25) c isolation properties isolation voltage v isol dc test voltage t p = 2 s 4000 v creepage distance min. 12,7 mm clearance min. 12,7 mm comparative tracking index cti > 200
10-F007NIA030SM-P965F39 target datasheet 17 jun. 2016 / revision 1 4 copyright vincotech characteristic values parameter symbol conditions value unit v ge [v] v gs [v] v ce [v] v ds [v] v f [v] i c [a] i d [a] i f [a] t j [c] min typ max boost switch static gate-emitter threshold voltage v ge(th) v ge = v ce 0,00043 25 5 5,8 6,5 v collector-emitter saturation voltage v cesat 15 30 25 1,1 1,51 1,9 v 125 1,71 150 1,78 collector-emitter cut-off current i ces 0 600 25 1,6 a gate-emitter leakage current i ges 20 0 25 300 na internal gate resistance r g none ? input capacitance c ies f = 1 mhz 0 25 25 1630 pf output capacitance c oes 108 reverse transfer capacitance c res 50 gate charge q g 15 480 30 25 167 nc thermal thermal resistance junction to sink r th(j-s) phase-change material = 3,4 w/mk 1,71 k/w boost diode static forward voltage v f 10 25 1,67 1,87 v 125 1,56 reverse leakage current i r 650 25 0,14 a thermal thermal resistance junction to sink r th(j-s) phase-change material = 3,4 w/mk 2,87 k/w
10-F007NIA030SM-P965F39 target datasheet 17 jun. 2016 / revision 1 5 copyright vincotech characteristic values parameter symbol conditions value unit v ge [v] v gs [v] v ce [v] v ds [v] v f [v] i c [a] i d [a] i f [a] t j [c] min typ max buck switch static gate-emitter threshold voltage v ge(th) v ge = v ce 0,0003 25 3,3 4 4,7 v collector-emitter saturation voltage v cesat 15 30 25 1,69 2,22 v 125 1,92 collector-emitter cut-off current i ces 0 650 25 40 a gate-emitter leakage current i ges 20 0 25 120 na internal gate resistance r g none ? input capacitance c ies f = 1 mhz 0 25 25 2100 pf reverse transfer capacitance c res 7,7 gate charge q g 15 520 30 25 70 nc thermal thermal resistance junction to sink r th(j-s) phase-change material = 3,4 w/mk 1,67 k/w buck diode static forward voltage v f 15 25 2,48 2,73 v 125 1,73 reverse leakage current i r 600 25 10 a thermal thermal resistance junction to sink r th(j-s) phase-change material = 3,4 w/mk 1,65 k/w boost sw. protection diode static forward voltage v f 10 25 1,60 1,95 v 150 1,56 reverse leakage current i r 600 25 27 a thermal thermal resistance junction to sink r th(j-s) phase-change material = 3,4 w/mk 2,87 k/w
10-F007NIA030SM-P965F39 target datasheet 17 jun. 2016 / revision 1 6 copyright vincotech characteristic values parameter symbol conditions value unit v ge [v] v gs [v] v ce [v] v ds [v] v f [v] i c [a] i d [a] i f [a] t j [c] min typ max thermistor rated resistance r 25 21,5 k? deviation of r 100 r/r r 100 = 1486 ? 100 -4,5 +4,5 % power dissipation p 25 210 mw power dissipation constant 25 3,5 mw/ k b-value b (25/50) 25 3884 k b-value b (25/100) 25 3964 k vincotech ntc reference f
10-F007NIA030SM-P965F39 target datasheet 17 jun. 2016 / revision 1 7 copyright vincotech date code ul & vin lot serial wwyy ul vin lllll ssss type&ver lot number serial date code tttttttvv lllll ssss wwyy pin x y function 1 33,6 0 g4 2 30,7 0 s4 3 27,8 0 nc 4 22 0 -dc 5 19,2 0 -dc 6 11,4 0 gnd 7 0 0 s2 8 0 2,9 g2 9 0 9,9 line 10 0 12,7 line 11 0 15,5 line 12 0 19,7 g1 13 0 22,6 s1 14 10,1 22,6 gnd 15 17,9 22,6 +dc 16 20,8 22,6 +dc 17 27,8 22,6 nc 18 30,7 22,6 s3 19 33,6 22,6 g3 20 33,6 14,8 ntc1 21 33,6 8,2 ntc2 ordering code 10-F007NIA030SM-P965F39 pin table [mm] name nn-nnnnnnnnnnnnnn-ttttttvv outline text datamatrix version without thermal paste 17mm housing with solder pins ordering code & marking nn-nnnnnnnnnnnnnn ttttttvv wwyy ul vin lllll ssss
10-F007NIA030SM-P965F39 target datasheet 17 jun. 2016 / revision 1 8 copyright vincotech buck diode 10 a boost sw. protection diode fwd 600 v thermistor boost switch 10 a 30 a buck switch id d9, d10 igbt fwd component ntc thermistor d3, d4 fwd t1, t2 d13, d14 600 v 15 a 650 v pinout boost diode identification comment 600 v voltage current function 650 v 30 a t5, t6 igbt
10-F007NIA030SM-P965F39 target datasheet 17 jun. 2016 / revision 1 9 copyright vincotech disclaimer the information, specifications, procedures, method s and recommendations herein (together information ) are presented by vincotech to reader in good faith, are believed to be accurate a nd reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur. vincotech reserves the rig ht to make any changes without further notice to an y products to improve reliability, function or design. no representation, guarantee or warranty is made to reader as to the accuracy, rel iability or completeness of said information or that the application or use of any o f the same will avoid hazards, accidents, losses, d amages or injury of any kind to persons or property or that the same will not infringe thir d parties rights or give desired results. it is rea ders sole responsibility to test and determine the suitability of the information and the product for readers intended use. life support policy vincotech products are not authorised for use as cr itical components in life support devices or system s without the express written approval of vincotech. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implan t into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for u se provided in labelling can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. packaging instruction standard packaging quantity (spq) 135 >spq standard 10-F007NIA030SM-P965F39-t1-14 17 jun. 2016 product status definition datasheet status product status definition target formative or in design this datasheet contains the design specifications f or product development. specifications may change in any manner without not ice. the data contained is exclusively intended for technically trained staff.
|
